symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol typ max 78 110 106 150 r jl 64 80 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 t a =70c power dissipation t a =25c p d 30 -30 12 drain-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 3.4 2.7 30 1.15 0.73 -1.8 -2.3 1.15 0.73 -30 12 gate-source voltage a continuous drain current a t a =25c i d t a =70c pulsed drain current b ao6601 features n-channel p-channel v ds (v) = 30v -30v i d = 3.4a (v gs = 10v) -2.3a (v gs = -10v) r ds(on) < 60m ? (v gs = 10v) < 135m ? (v gs = -10v) < 75m ? (v gs = 4.5v) < 185m ? (v gs = -4.5v) < 115m ? (v gs = 2.5v) < 265m ? (v gs = -2.5v) the ao6601 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter, suitable for a multitude of applications. standard product ao6601 is pb-free (meets rohs & sony 259 specifications). AO6601L is a green product ordering option. ao6601 and AO6601L are electrically identical. g1 d1 s1 g2 d2 s2 n-channel p -channel tsop6 top view g2 s2 g1 d2 s1 d1 1 2 3 6 5 4 complementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 7
ao6601 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1 1.4 v i d(on) 10 a 50 60 t j =125c 75 60 75 m ? 88 115 m ? g fs 7.8 s v sd 0.8 1 v i s 1.5 a c iss 390 pf c oss 54.5 pf c rss 41 pf r g 3 ? q g 4.34 nc q gs 1.38 nc q gd 0.6 nc t d(on) 4ns t r 2ns t d(off) 22 ns t f 3ns t rr 11 ns q rr 5.5 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =3a i f =3a, di/dt=100a/ s gate resistance turn-off delaytime turn-off fall time body diode reverse recovery time diode forward voltage i s =1a,v gs =0v output capacitance reverse transfer capacitance maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs =12v m ? v gs =4.5v, i d =3a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v gs =2.5v, i d =2a v ds =5v, i d =3a r ds(on) static drain-source on-resistance v gs =10v, i d =3a forward transconductance v gs =10v, v ds =15v, r l =5 ? , r gen =6 ? i f =3a, di/dt=100a/ s gate source charge gate drain charge turn-on delaytime turn-on rise time a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : june 2005 www.freescale.net.cn 2 / 7
ao6 601 n-channel typical characteristics typical electrical and thermal characteristics 0 3 6 9 12 15 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 0 25 50 75 100 125 150 0246810 i d (a) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 0 50 100 150 200 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5 v v gs =10 v i d =2a 25c 125c www.freescale.net.cn 3 / 7
ao6601 n-channel typical characteristics typical electrical and thermal characteristics 0 1 2 3 4 5 0123456 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 1 0 m s 1m s 0 .1 s 1s 10s dc r ds(on) limite d t j(max) =150c t a =25c 10 p s v ds =15v i d =3.4a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 7
ao6601 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.6 -1 -1.4 v i d(on) -10 a 107 135 t j =125c 135 185 m ? 195 265 m ? g fs 8s v sd -0.85 -1 v i s -1.35 a c iss 409 pf c oss 55 pf c rss 42 pf r g 12 ? q g 4.8 nc q gs 1.34 nc q gd 0.72 nc t d(on) 13 ns t r 10 ns t d(off) 28 ns t f 13 ns t rr 26 ns q rr 15.6 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-2.5a, di/dt=100a/ s body diode reverse recovery charge i f =-2.5a, di/dt=100a/ s turn-on delaytime v gs =-10v, v ds =-15v, r l =6 ? , r gen =6 ? turn-on rise time turn-off delaytime turn-off fall time gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-2.5a gate source charge gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz output capacitance reverse transfer capacitance forward transconductance v ds =-5v, i d =-2.3a diode forward voltage i s =-1a,v gs =0v r ds(on) static drain-source on-resistance v gs =-10v, i d =-2.3a m ? v gs =-4.5v, i d =-2a v gs =-2.5v, i d =-1a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-4.5v, v ds =-5v a gate-body leakage current v ds =0v, v gs =12v drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : june 2005 www.freescale.net.cn 5 / 7
ao6601 , AO6601L p-channel: typical electrical and thermal characteristics 0 5 10 15 20 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3.5v -2.5 v -2v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 50 75 100 125 150 175 200 225 250 0123456 -i d (a) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-4.5v, v gs =-10v v gs =-2.5v 0 50 100 150 200 250 300 350 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10 v i d =-2a 25c 125c i d =-2a -4v v gs =-2.5v -5 v -3 v www.freescale.net.cn 6 / 7
ao6601 p-channel typical characteristics typical electrical and thermal characteristics 0 1 2 3 4 5 0123456 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1 s 10s dc r ds(on) limite d t j(max) =150c t a =25c v ds =-15v i d =-2.0a single pulse d=t o n / t t j,pk =t a +p dm .z ja .r ja r ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 7 / 7
|
